CMOS
gate oxides
reliability
ferroelectrics
RRAM
H-Index Rankings
University / Institution:
# 29
Country:
# 14,048
Region:
# 15,534
World:
# 33,215
H-Index
Total:
67
Last 6 Year:
25
Last 6 Year/Total:
0.373
i10 Index
Total:
223
Last 6 Year:
60
Last 6 Year/Total:
0.269
Citation
Total:
19,707
Last 6 Year:
2,950
Last 6 Year/Total:
0.150
AD Scientific Index - World Scientists Rankings - 2024 | H INDEX | i10 INDEX | CITATION | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
University / Institution | Country | Region | World | Name | Country | University / Institution | Subject | Total | Last 6 year | Last 6 year/total | Total | Last 6 year | Last 6 year/total | Total | Last 6 year | Last 6 year/total |
29 | 14,048 | 15,534 | 33,215 |
|
United States | IBM Corporation |
Research Staff Member, IBM Research, TJ Watson Research Center
CMOS | gate oxides | reliability | ferroelectrics | RRAM | |
67 | 25 | 0.373 | 223 | 60 | 0.269 | 19,707 | 2,950 | 0.150 |