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Amirhasan Nourbakhsh

Amirhasan Nourbakhsh

Massachusetts Institute of Technology - Cambridge / United States
Engineering & Technology / Nanoscience and Nanotechnology
AD Scientific Index ID: 1409944
person_outline Amirhasan Nourbakhsh's MOST POPULAR ARTICLES
1-) Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application Nano letters 16 (2), 1359-1366, 2016
2-) MoS2 Field-Effect Transistor with Sub-10 nm Channel Length Nano letters 16 (12), 7798-7806, 2016
3-) Bandgap opening in oxygen plasma-treated graphene Nanotechnology 21 (43), 435203, 2010
4-) Subthreshold swing improvement in MoS 2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO 2/HfO 2 gate dielectric stack Nanoscale 9 (18), 6122-6127, 2017
5-) Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing The Journal of Physical Chemistry C 114 (15), 6894-6900, 2010