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Chao-Yang (Michael) Chen

Chao-Yang (Michael) Chen

Taiwan Semiconductor Manufacturing Company Ltd. - Hsinchu / Taiwan
Others
AD Scientific Index ID: 4450317
台湾半导体制造公司有限公司
person_outline Chao-Yang (Michael) Chen's MOST POPULAR ARTICLES
1-) Intrinsic program instability in HfO2 RRAM and consequences on program algorithms 2015 IEEE International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2015
2-) Endurance degradation mechanisms in TiN\ Ta2O5\ Ta resistive random-access memory cells Applied Physics Letters 106 (5), 053501, 2015
3-) Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta2O5\Ta RRAM device 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
4-) Understanding the impact of programming pulses and electrode materials on the endurance properties of scaled Ta2O5 RRAM cells International Electron Devices Meeting-IEDM, 355-358, 2014
5-) First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device Journal of Applied Physics 119 (22), 225107, 2016