Daniel Lichtenwalner

Wolfspeed - / United States

Engineering & Technology / Electrical & Electronic Engineering

AD Scientific Index ID: 4970068

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Daniel Lichtenwalner's MOST POPULAR ARTICLES

1-) Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014

2-) Growth and characterization of cubic boron nitride thin films Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (6 …, 1994

3-) New generation 10kV SiC power MOSFET and diodes for industrial applications Proceedings of PCIM Europe 2015; International Exhibition and Conference for …, 2015

4-) Work function engineering using lanthanum oxide interfacial layers Applied physics letters 89 (23), 2006

5-) Single-event burnout of SiC junction barrier Schottky diode high-voltage power devices IEEE Transactions on Nuclear Science 65 (1), 256-261, 2017

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