AD Scientific Index
 Open Nav
Login Login Pricing & Plans Pricing & Plans
Daniel M Fleetwood

Daniel M Fleetwood

Vanderbilt University - Nashville / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 1325678
person_outline Daniel M Fleetwood's MOST POPULAR ARTICLES
1-) Radiation effects in MOS oxides IEEE Transactions on Nuclear Science 55 (4), 1833-1853, 2008
2-) Effects of oxide traps, interface traps, and ‘‘border traps’’on metal‐oxide‐semiconductor devices Journal of applied physics 73 (10), 5058-5074, 1993
3-) 'Border traps' in MOS devices IEEE transactions on nuclear science 39 (2), 269-271, 1992
4-) Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices IEEE Transactions on Nuclear Science 60 (3), 1706-1730, 2013
5-) Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994