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Donald Canaperi

Donald Canaperi

IBM Corporation - New York / United States
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AD Scientific Index ID: 4463320
person_outline Donald Canaperi's MOST POPULAR ARTICLES
1-) Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
2-) Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation Digest. International Electron Devices Meeting,, 247-250, 2002
3-) Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs IEEE International Electron Devices Meeting 2003, 3.1. 1-3.1. 4, 2003
4-) A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels 2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016
5-) Very low effective dielectric constant interconnect structures and methods for fabricating the same US Patent 7,045,453, 2006