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Erwann Fourmond

Erwann Fourmond

Institut National des Sciences Appliquées de Lyon - Villeurbanne / France
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AD Scientific Index ID: 918459
National Institute of Applied Sciences of Lyon
person_outline Erwann Fourmond's MOST POPULAR ARTICLES
1-) Study of the composition of hydrogenated silicon nitride SiNx: H for efficient surface and bulk passivation of silicon Solar Energy Materials and Solar Cells 93 (8), 1281-1289, 2009
2-) Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation Thin Solid Films 516 (20), 6954-6958, 2008
3-) Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron Applied Physics Letters 100 (4), 2012
4-) Characterization of Al2O3 thin films prepared by thermal ALD Energy Procedia 77, 558-564, 2015
5-) Design of porous silicon/PECVD SiOx antireflection coatings for silicon solar cells Materials Science and Engineering: B 176 (1), 45-48, 2011