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Jaswant S Rathore

Jaswant S Rathore

Indian Institute of Technology Bombay - Mumbai / India
Others
AD Scientific Index ID: 5436672
भारतीय प्रौद्योगिकी संस्थान, मुंबई
person_outline Jaswant S Rathore's MOST POPULAR ARTICLES
1-) Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn Journal of Physics D: Applied Physics 54 (18), 185105, 2021
2-) Dislocation density and strain-relaxation in Ge1− xSnx layers grown on Ge/Si (0 0 1) by low-temperature molecular beam epitaxy Journal of Crystal Growth 470, 135-142, 2017
3-) Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures Journal of Applied Physics 124 (6), 2018
4-) Excimer laser annealing: An alternative route and its optimisation to effectively activate Si dopants in AlN films grown by plasma assisted molecular beam epitaxy Materials Research Bulletin 97, 300-305, 2018
5-) Tuning the effective band gap and finding the optimal growth condition of InN thin films on GaN/sapphire substrates by plasma assisted molecular beam epitaxy technique Superlattices and Microstructures 101, 405-414, 2017