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Jonathan Abrokwah

Jonathan Abrokwah

Accra Institute of Technology - Accra / Ghana
Engineering & Technology / Metallurgical & Materials Engineering
AD Scientific Index ID: 3508826
person_outline Jonathan Abrokwah's MOST POPULAR ARTICLES
1-) Enhancement-mode GaAs MOSFETs with an In0. 3 Ga0. 7As channel, a mobility of over 5000 cm2/V· s, and transconductance of over 475 μS/μm IEEE Electron Device Letters 28 (12), 1080-1082, 2007
2-) Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor IEEE Electron Device Letters 23 (9), 508-510, 2002
3-) High mobility III-V MOSFETs for RF and digital applications 2007 IEEE International Electron Devices Meeting, 621-624, 2007
4-) Growth and physical properties of thin films on GaAs(001) substrate by molecular-beam epitaxy Applied physics letters 82 (18), 2978-2980, 2003
5-) A manufacturable complementary GaAs process 15th Annual GaAs IC Symposium, 127-130, 1993