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Maria Loginova

Maria Loginova

Lomonosov Moscow State University - Moscow / Russia
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AD Scientific Index ID: 4857380
Московский государственный университет
person_outline Maria Loginova's MOST POPULAR ARTICLES
1-) New two-step iteration process for solving the semiconductor plasma generation problem with arbitrary BC in 2D case WIT transactions on modelling and simulation 59, 85, 2015
2-) Difference scheme for the problem of femtosecond pulse interaction with a semiconductor in the case of nonlinear mobility Zhurnal Vychislitel'noi Matematiki i Matematicheskoi Fiziki 45 (12), 2185-2196, 2005
3-) Influence of external electric field on laser-induced wave process occurring in semiconductor under the femtosecond pulse acting Photonic Crystal Materials and Devices XI 9127, 47-58, 2014
4-) Efficiency of using adaptive artificial boundary conditions at computer simulation of contrast spatio‐temporal laser‐induced structures in a semiconductor Computational and Mathematical Methods 3 (6), e1165, 2021
5-) Conservative finite-difference scheme for the 2D problem of femtosecond laser pulse interaction with kink structure of high absorption in semiconductor International Journal of Computer Mathematics 97 (1-2), 207-244, 2020