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Martin L Green

Martin L Green

National Institute of Standards and Technology - Maryland / United States
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AD Scientific Index ID: 4386905
person_outline Martin L Green's MOST POPULAR ARTICLES
1-) Ultrathin (< 4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits Journal of Applied Physics 90 (5), 2057-2121, 2001
2-) Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates Applied physics letters 59 (7), 811-813, 1991
3-) Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process US Patent 6,797,525, 2004
4-) Nucleation and growth of atomic layer deposited gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide or Si–O–N) underlayers Journal of Applied Physics 92 (12), 7168-7174, 2002
5-) The 2019 materials by design roadmap Journal of Physics D: Applied Physics 52 (1), 013001, 2018