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Maxime Berthou

Maxime Berthou

Institut National des Sciences Appliquées de Lyon - Villeurbanne / France
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AD Scientific Index ID: 916054
National Institute of Applied Sciences of Lyon
person_outline Maxime Berthou's MOST POPULAR ARTICLES
1-) Gate Oxide Degradation of SiC MOSFET in Switching Conditions Electron Device Letters, 1, 2014
2-) Monolithically Integrated Temperature Sensor in Silicon Carbide Power MOSFETs IEEE Transaction on Power Electronics, 7, 2013
3-) ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation Solid-State Electronics 94, 32-38, 2014
4-) Study of 4H-SiC Schottky diode designs for 3.3 kV applications Materials science forum 778, 795-799, 2014
5-) High-voltage 4H-SiC power MOSFETs with Boron-doped gate oxide IEEE Transactions on Industrial Electronics 64 (11), 8962-8970, 2017