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Mohammad Najmzadeh

Mohammad Najmzadeh

Intel Corporation - California / United States
Engineering & Technology / Nanoscience and Nanotechnology
AD Scientific Index ID: 4456925
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person_outline Mohammad Najmzadeh's MOST POPULAR ARTICLES
1-) MoS2 Heterojunctions by Thickness Modulation Scientific reports 5, 2015
2-) The high-mobility bended n-channel silicon nanowire transistor IEEE transactions on electron devices 57 (4), 866-876, 2010
3-) A silicon straight tube fluid density sensor Journal of Micromechanics and Microengineering 17 (8), 1657-1663, 2007
4-) Quantum well InAs/AlSb/GaSb vertical Tunnel FET with HSQ mechanical support IEEE Transactions on Nanotechnology 14, 580 - 584, 2015
5-) Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain Solid-State Electronics 74, 114-120, 2012