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Mohammad Wahidur Rahman

Mohammad Wahidur Rahman

Wolfspeed - / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 5307112
person_outline Mohammad Wahidur Rahman's MOST POPULAR ARTICLES
1-) Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation IEEE Electron Device Letters 41 (1), 19-22, 2019
2-) Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux Applied Physics Letters 119 (12), 2021
3-) Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors Applied Physics Letters 119 (19), 2021
4-) Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-k Bismuth Zinc Niobate Oxide IEEE Transactions on Electron Devices 68 (7), 3333-3338, 2021
5-) BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm Applied Physics Letters 116 (2), 023507, 2020