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Moonyoung Jeong

Moonyoung Jeong

Samsung Electronics, South Korea - Gyeonggi / South Korea
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 4438848
삼성전자, 한국
person_outline Moonyoung Jeong's MOST POPULAR ARTICLES
1-) The breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor (RCAT) for 88 nm feature size and beyond 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003
2-) S-RCAT (sphere-shaped-recess-channel-array transistor) technology for 70nm DRAM feature size and beyond Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 34-35, 2005
3-) The excellent scalability of the RCAT (recess-channel-array-transistor) technology for sub-70nm DRAM feature size and beyond IEEE VLSI-TSA International Symposium on VLSI Technology, 2005.(VLSI-TSA …, 2005
4-) A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm DRAMs IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 69-72, 2004
5-) Ongoing evolution of DRAM scaling via third dimension-vertically stacked DRAM 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023