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Murugapandiyan P

Murugapandiyan P

Anil Neerukonda Institute of Technology and Sciences - Visakhapatnam / India
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AD Scientific Index ID: 4705852
अनिल नीरुकोंडा प्रौद्योगिकी और विज्ञान संस्थान
person_outline Murugapandiyan P's MOST POPULAR ARTICLES
1-) Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study Microelectronics Journal 114, 105141, 2021
2-) Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications Superlattices and Microstructures 111, 1050-1057, 2017
3-) DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications AEU-International Journal of Electronics and Communications 77, 163-168, 2017
4-) Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications Journal of Science: Advanced Materials and Devices 5 (2), 192-198, 2020
5-) High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: a simulation study Microelectronics Journal 140, 105946, 2023