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Myoungsub Kim

Myoungsub Kim

SK Telecom - Seoul / South Korea
Others
AD Scientific Index ID: 4965881
SK 통신
person_outline Myoungsub Kim's MOST POPULAR ARTICLES
1-) High-performance, cost-effective 2z nm two-deck cross-point memory integrated by self-align scheme for 128 Gb SCM 2018 IEEE International Electron Devices Meeting (IEDM), 37.1. 1-37.1. 4, 2018
2-) Highly productive PCRAM technology platform and full chip operation: Based on 4F2 (84nm pitch) cell scheme for 1 Gb and beyond 2011 International Electron Devices Meeting, 3.3. 1-3.3. 4, 2011
3-) Programming disturbance and cell scaling in phase change memory: For up to 16nm based 4F2 cell 2010 Symposium on VLSI Technology, 199-200, 2010
4-) Phase change memory device and method for manufacturing the same US Patent App. 12/100,536, 2009
5-) Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same US Patent 8,693,241, 2014