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Rumyantsev Alexander

Rumyantsev Alexander

Moscow Institute of Electronic Technology - Moscow / Russia
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AD Scientific Index ID: 5753544
Национальный исследовательский университет
person_outline Rumyantsev Alexander's MOST POPULAR ARTICLES
1-) Sputtering of redeposited material in focused ion beam silicon processing Materials Research Express 5 (2), 025905, 2018
2-) Simulation of material sputtering with a focused ion beam Technical Physics Letters 41 (6), 610-613, 2015
3-) Prediction of surface topography due to finite pixel spacing in FIB milling of rectangular boxes and trenches Journal of Vacuum Science & Technology B 34 (6), 2016
4-) Study of silicon dioxide focused ion beam sputtering using electron microscopy imaging and level set simulation Vacuum 202, 111128, 2022
5-) Characterizing interface structure between crystalline and ion bombarded silicon by transmission electron microscopy and molecular dynamics simulations Applied Surface Science 540, 148278, 2021