AD Scientific Index
 Open Nav
Login Login Pricing & Plans Pricing & Plans
Santunu Sarangi

Santunu Sarangi

Silicon Institute of Technology - Bhubaneswar / India
Others
AD Scientific Index ID: 5598077
सिलिकॉन प्रौद्योगिकी संस्थान
person_outline Santunu Sarangi's MOST POPULAR ARTICLES
1-) A rigorous simulation based study of gate misalignment effects in gate engineered double-gate (DG) MOSFETs Superlattices and Microstructures 60, 263-279, 2013
2-) An analytical surface potential modeling of fully-depleted symmetrical double-gate (DG) strained-Si MOSFETs including the effect of interface charges 2013 Students Conference on Engineering and Systems (SCES), 1-5, 2013
3-) An analytical model for the threshold voltage of short- channel double-material-gate (DMG) MOSFETs with a strained-silicon (s-Si) channel on silicon-germanium (SiGe) substrates Journal of Semiconductor Technology and Science 13 (4), 367-380, 2013
4-) An analytical surface potential model of strained-si on silicongermanium MOSFET including the effects of interface charge Journal of Electron Device 15, 1285-1290, 2012
5-) A simulation-based study of gate misalignment effects in triple-material double-gate (tmdg) mosfets 2013 International Mutli-Conference on Automation, Computing, Communication …, 2013