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Sebastian Killge

Sebastian Killge

Technische Universität Dresden - Dresden / Germany
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AD Scientific Index ID: 4580213
Dresden University of Technology
person_outline Sebastian Killge's MOST POPULAR ARTICLES
1-) In Situ Experiments To Reveal the Role of Surface Feature Sidewalls in the Cassie–Wenzel Transition Langmuir 30 (50), 15162-15170, 2014
2-) 3D system integration on 300 mm wafer level: High-aspect-ratio TSVs with ruthenium seed layer by thermal ALD and subsequent copper electroplating Microelectronic Engineering 205, 20-25, 2019
3-) Demonstration of a graphene-base heterojunction transistor with saturated output current Journal of Applied Physics 125 (23), 2019
4-) TSV transistor—vertical metal gate FET inside a through silicon VIA IEEE Electron Device Letters 39 (10), 1493-1496, 2018
5-) Copper-based TSV: Interposer 3D Stacked Chips: From Emerging Processes to Heterogeneous Systems, 9-28, 2016