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Sudhansu Kumar Pati

Sudhansu Kumar Pati

Silicon Institute of Technology - Bhubaneswar / India
Others
AD Scientific Index ID: 4510575
सिलिकॉन प्रौद्योगिकी संस्थान
person_outline Sudhansu Kumar Pati's MOST POPULAR ARTICLES
1-) High performance AlInN/AlN/GaN p-GaN back barrier gate-recessed enhancement-mode HEMT Superlattices and Microstructures 75, 347-357, 2014
2-) Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs Microelectronics Reliability 61, 24-29, 2016
3-) Influence of barrier thickness on AlInN/GaN underlap DG MOSFET device performance Superlattices and Microstructures 60, 47-59, 2013
4-) Impact of InGaN back barrier layer on performance of AIInN/AlN/GaN MOS-HEMTs Superlattices and Microstructures 97, 258-267, 2016
5-) Study of body and oxide thickness variation on analog and RF performance of underlap DG-MOSFETs Microelectronics Reliability 54 (6-7), 1137-1142, 2014