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William Alan Doolittle

William Alan Doolittle

Georgia Institute of Technology - Atlanta / United States
Engineering & Technology / Electrical & Electronic Engineering
AD Scientific Index ID: 1421712
person_outline William Alan Doolittle's MOST POPULAR ARTICLES
1-) Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics Journal of applied physics 91 (4), 2499-2507, 2002
2-) InN: A material with photovoltaic promise and challenges Journal of Crystal Growth 288 (2), 218-224, 2006
3-) Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm− 3 in GaN Applied Physics Letters 93 (17), 2008
4-) GaN betavoltaic energy converters Conference Record of the Thirty-first IEEE Photovoltaic Specialists …, 2005
5-) Thermal conductance across harmonic-matched epitaxial Al-sapphire heterointerfaces Communications Physics 3 (1), 115, 2020