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Yuji Yamamoto

Yuji Yamamoto

Leibniz-Institut für innovative Mikroelektronik - Frankfurt / Germany
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AD Scientific Index ID: 4433363
Leibniz Institute for Innovative Microelectronics
person_outline Yuji Yamamoto's MOST POPULAR ARTICLES
1-) SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay 2010 International Electron Devices Meeting, 30.5. 1-30.5. 4, 2010
2-) Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz Nature Photonics 15 (12), 925-931, 2021
3-) A 0.13 SiGe BiCMOS Technology Featuring f/f of 240/330 GHz and Gate Delays Below 3 ps IEEE Journal of Solid-State Circuits 45 (9), 1678-1686, 2010
4-) Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD Solid-State Electronics 60 (1), 2-6, 2011
5-) Novel collector design for high-speed SiGe: C HBTs Digest. International Electron Devices Meeting,, 775-778, 2002